Infineon Half Bridge C Series N channel-Channel MOSFET Modules, 185 A, 1200 V Enhancement, 7-Pin AG-62MMHB
- RS Stock No.:
- 762-898
- Mfr. Part No.:
- FF3MR12KM1HSHPSA1
- Manufacturer:
- Infineon
N
Subtotal (1 unit)*
SGD704.11
(exc. GST)
SGD767.48
(inc. GST)
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In Stock
- 10 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 + | SGD704.11 |
*price indicative
- RS Stock No.:
- 762-898
- Mfr. Part No.:
- FF3MR12KM1HSHPSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET Modules | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 185A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | C Series | |
| Package Type | AG-62MMHB | |
| Mount Type | Screw | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 4.62mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 2.65μC | |
| Forward Voltage Vf | 6.25V | |
| Maximum Power Dissipation Pd | 20mW | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Half Bridge | |
| Standards/Approvals | RoHS Compliant | |
| Length | 106.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET Modules | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 185A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series C Series | ||
Package Type AG-62MMHB | ||
Mount Type Screw | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 4.62mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 2.65μC | ||
Forward Voltage Vf 6.25V | ||
Maximum Power Dissipation Pd 20mW | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Half Bridge | ||
Standards/Approvals RoHS Compliant | ||
Length 106.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- HU
The Infineon CoolSiC Trench MOSFET half bridge module features voltage rating of 2000 V and supports high current density. It is suitable for UPS systems, DC/DC converter, High-frequency switching application, Solar applications, Energy storage systems (ESS), and DC charger for EV.
Low switching losses
High current density
Qualified for industrial applications
4 kV AC 1 min insulation
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