Vishay SiD N-Channel MOSFET, 227 A, 60 V Enhancement, 8-Pin PowerPAK SO-8 SIDR626EP-T1-RE3
- RS Stock No.:
- 735-139
- Mfr. Part No.:
- SIDR626EP-T1-RE3
- Manufacturer:
- Vishay
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SGD6.21
(exc. GST)
SGD6.77
(inc. GST)
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Units | Per unit |
|---|---|
| 1 - 9 | SGD6.21 |
| 10 - 49 | SGD3.86 |
| 50 - 99 | SGD2.98 |
| 100 + | SGD2.02 |
*price indicative
- RS Stock No.:
- 735-139
- Mfr. Part No.:
- SIDR626EP-T1-RE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 227A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK SO-8 | |
| Series | SiD | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00174Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 68nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 60V | |
| Maximum Operating Temperature | 175°C | |
| Length | 7mm | |
| Height | 2mm | |
| Standards/Approvals | RoHS | |
| Width | 6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 227A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK SO-8 | ||
Series SiD | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00174Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 68nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 60V | ||
Maximum Operating Temperature 175°C | ||
Length 7mm | ||
Height 2mm | ||
Standards/Approvals RoHS | ||
Width 6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency synchronous rectification in AI power server solutions. It delivers very low on-resistance of 1.7mΩ maximum at 10V gate drive to minimize conduction losses in high-current DC/DC converter applications.
50.8A at TA=25°C and 227A at TC=25°C current ratings
Tuned for lowest RDS(on) x Qoss figure-of-merit
100% Rg and UIS tested for reliability
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