Vishay SiD N channel-Channel MOSFET, 153 A, 80 V Enhancement, 8-Pin PowerPAK SO-8 SiDR5802EP
- RS Stock No.:
- 735-134
- Mfr. Part No.:
- SiDR5802EP
- Manufacturer:
- Vishay
N
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SGD5.20
(exc. GST)
SGD5.67
(inc. GST)
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Units | Per unit |
|---|---|
| 1 - 9 | SGD5.20 |
| 10 - 24 | SGD3.39 |
| 25 - 99 | SGD1.78 |
| 100 - 499 | SGD1.72 |
| 500 + | SGD1.68 |
*price indicative
- RS Stock No.:
- 735-134
- Mfr. Part No.:
- SiDR5802EP
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 153A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | SiD | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0029Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 80V | |
| Maximum Power Dissipation Pd | 150W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 37.3nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Width | 6mm | |
| Length | 7mm | |
| Height | 2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 153A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series SiD | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0029Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 80V | ||
Maximum Power Dissipation Pd 150W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 37.3nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Width 6mm | ||
Length 7mm | ||
Height 2mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Vishay N-Channel MOSFET rated at 80V drain-source voltage for high-efficiency power conversion in AI server and data center applications. It features ultra-low on-resistance of 2.9mΩ maximum at 10V gate drive to reduce conduction losses in synchronous buck topologies.
153A continuous drain current at TC=25°C
28nC typical total gate charge for fast switching
-55°C to +175°C extended temperature range
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