DiodesZetex DMN63D8L N-Channel MOSFET, 400 mA, 30 V Enhancement, 3-Pin SOT-23 DMN63D8L-7
- RS Stock No.:
- 718-535
- Mfr. Part No.:
- DMN63D8L-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (3000 units, on reels of 3000)*
SGD162.00
(exc. GST)
SGD177.00
(inc. GST)
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Temporarily out of stock
- Shipping from 04 January 2027
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 12000 | SGD0.054 | SGD162.00 |
| 15000 + | SGD0.053 | SGD159.00 |
*price indicative
- RS Stock No.:
- 718-535
- Mfr. Part No.:
- DMN63D8L-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 400mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | DMN63D8L | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.8Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 0.9nC | |
| Minimum Operating Temperature | -50°C | |
| Maximum Power Dissipation Pd | 520mW | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Height | 1.1mm | |
| Width | 2.5mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 400mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series DMN63D8L | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.8Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 0.9nC | ||
Minimum Operating Temperature -50°C | ||
Maximum Power Dissipation Pd 520mW | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Height 1.1mm | ||
Width 2.5mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The DiodesZetex N Channel enhancement mode MOSFET designed for high-efficiency power management applications. This versatile component prioritises minimal on-state resistance while ensuring superior switching performance. Ideal for applications such as motor control, power management functions, and backlighting, this MOSFET offers a reliable and efficient solution to handle demanding power requirements. With a robust construction compliant with AEC-Q101 standards, it is also classified as a ’Green’ device, underscoring its environmentally friendly credentials. Its Compact SOT23 package facilitates space-efficient placements in various electronics.
Achieves Low on resistance, ensuring high efficiency in power management
Boasts low input capacitance for fast switching speeds, enhancing overall performance
Handles a maximum drain-source voltage of 30V, making it versatile for various applications
Offers continuous drain currents up to 350mA at 25°C, supporting reliable operation in demanding scenarios
Designed with ESD protection on the gate to safeguard the device and enhance longevity
Complies with RoHS and is free from lead, halogen, and antimony, supporting environmentally-friendly manufacturing
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