ROHM RD3 Type P-Channel Single MOSFETs, 29 A, 60 V Enhancement, 3-Pin TO-252 RD3L03BBJHRBTL
- RS Stock No.:
- 646-543
- Mfr. Part No.:
- RD3L03BBJHRBTL
- Manufacturer:
- ROHM
Bulk discount available
View bulk pricing optionsSubtotal (10 units, on tapes of 10)*
SGD11.45
(exc. GST)
SGD12.48
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 90 unit(s) shipping from 05 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | SGD1.145 | SGD11.45 |
| 100 - 490 | SGD1.008 | SGD10.08 |
| 500 - 990 | SGD0.904 | SGD9.04 |
| 1000 + | SGD0.715 | SGD7.15 |
*price indicative
- RS Stock No.:
- 646-543
- Mfr. Part No.:
- RD3L03BBJHRBTL
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type P | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | RD3 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 55mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 5V | |
| Maximum Power Dissipation Pd | 53W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.5mm | |
| Width | 6.8mm | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type P | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series RD3 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 55mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 5V | ||
Maximum Power Dissipation Pd 53W | ||
Maximum Operating Temperature 175°C | ||
Length 10.5mm | ||
Width 6.8mm | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM P channel 60 volt 29 ampere power metal oxide semiconductor field effect transistor features lead free plating and is restriction of hazardous substances compliant. It is one hundred percent avalanche tested.
Low on-resistance
AEC-Q101 qualified
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