ROHM RD3 Type P-Channel MOSFET, 80 A, 40 V Enhancement, 3-Pin TO-252 RD3G08BBJHRBTL
- RS Stock No.:
- 265-415
- Mfr. Part No.:
- RD3G08BBJHRBTL
- Manufacturer:
- ROHM
Bulk discount available
View bulk pricing optionsSubtotal (10 units, on tapes of 10)*
SGD38.60
(exc. GST)
SGD42.10
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 2,470 unit(s) shipping from 05 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | SGD3.86 | SGD38.60 |
| 100 - 240 | SGD3.667 | SGD36.67 |
| 250 + | SGD3.397 | SGD33.97 |
*price indicative
- RS Stock No.:
- 265-415
- Mfr. Part No.:
- RD3G08BBJHRBTL
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | RD3 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.9mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 145nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 142W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series RD3 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.9mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 145nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 142W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard AEC-Q101 | ||
The ROHM Automotive grade MOSFET is AEC-Q101 qualified, making it an excellent choice for Advanced Driver Assistance Systems, infotainment, lighting, and body applications. Its robust design ensures reliable performance in critical automotive environments.
Pb free lead plating
RoHS compliant
100 percent avalanche tested
Low on resistance
Related links
- ROHM RD3 Type P-Channel Single MOSFETs 3-Pin TO-252 RD3L03BBJHRBTL
- ROHM RD3 Type P-Channel MOSFET 100 V, 3-Pin TO-252 RD3P130SPFRATL
- ROHM RD3 N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 RD3G08CBKHRBTL
- ROHM RD3 N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 RD3L04BBKHRBTL
- Infineon OptiMOS P Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS P Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-263 IPB80P04P407ATMA1
- Infineon IPD Type P-Channel MOSFET -30 V Enhancement, 3-Pin PG-TO-252
- Infineon IPD Type P-Channel MOSFET -30 V Enhancement, 3-Pin PG-TO-252 IPD80P03P4L07ATMA2