Microchip 2N7002 Type N-Channel Single MOSFETs, 115 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002-G
- RS Stock No.:
- 644-261
- Mfr. Part No.:
- 2N7002-G
- Manufacturer:
- Microchip
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Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | SGD0.655 | SGD6.55 |
| 100 - 490 | SGD0.576 | SGD5.76 |
| 500 - 990 | SGD0.518 | SGD5.18 |
| 1000 + | SGD0.41 | SGD4.10 |
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- RS Stock No.:
- 644-261
- Mfr. Part No.:
- 2N7002-G
- Manufacturer:
- Microchip
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 115mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | 2N7002 | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.36W | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.12mm | |
| Length | 2.9mm | |
| Standards/Approvals | Lead (Pb)-free/RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 115mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series 2N7002 | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.36W | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1.12mm | ||
Length 2.9mm | ||
Standards/Approvals Lead (Pb)-free/RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
The Microchip N-Channel a low-threshold, Enhancement-mode (normally-off) transistor that uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Free from Secondary Breakdown
Low Power Drive Requirement
Ease of Paralleling
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