Microchip DN2625 N-Channel MOSFET, 1.1 A, 250 V Depletion, 3-Pin TO-252 DN2625K4-G
- RS Stock No.:
- 598-727
- Mfr. Part No.:
- DN2625K4-G
- Manufacturer:
- Microchip
Subtotal (2000 units, on reels of 2000)*
SGD4,434.00
(exc. GST)
SGD4,834.00
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 + | SGD2.217 | SGD4,434.00 |
*price indicative
- RS Stock No.:
- 598-727
- Mfr. Part No.:
- DN2625K4-G
- Manufacturer:
- Microchip
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.1A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | DN2625 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Channel Mode | Depletion | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.1A | ||
Maximum Drain Source Voltage Vds 250V | ||
Series DN2625 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Channel Mode Depletion | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Microchip Low threshold depletion-mode transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Very low gate threshold voltage
Designed to be source driven
Low switching losses
Low effective output capacitance
Designed for inductive loads
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