Infineon IMZA65 Type N-Channel MOSFET, 32.8 A, 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R060M2HXKSA1
- RS Stock No.:
- 351-873
- Mfr. Part No.:
- IMZA65R060M2HXKSA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionSubtotal (1 unit)*
SGD12.95
(exc. GST)
SGD14.12
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 240 unit(s) shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | SGD12.95 |
| 10 - 99 | SGD11.66 |
| 100 - 499 | SGD10.75 |
| 500 - 999 | SGD9.97 |
| 1000 + | SGD8.93 |
*price indicative
- RS Stock No.:
- 351-873
- Mfr. Part No.:
- IMZA65R060M2HXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 32.8A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Output Power | 130W | |
| Series | IMZA65 | |
| Package Type | PG-TO247-4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.1mm | |
| Standards/Approvals | JEDEC | |
| Length | 15.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 32.8A | ||
Maximum Drain Source Voltage Vds 650V | ||
Output Power 130W | ||
Series IMZA65 | ||
Package Type PG-TO247-4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 5.1mm | ||
Standards/Approvals JEDEC | ||
Length 15.9mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon CoolSiC MOSFET 650 V, 60 mΩ G2 in a TO-247-4 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Excellent figures of merit (FOMs)
Best in class RDS(on)
High robustness and overall quality
Flexible driving voltage range
Support for unipolar driving (VGSoff=0)
Best immunity against turn-on effects
Improved package interconnect with .XT
4-pin package
Related links
- Infineon IMZA65 Type N-Channel MOSFET 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R010M2HXKSA1
- Infineon IMZA65 Type N-Channel MOSFET 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R026M2HXKSA1
- Infineon IMZA65 Type N-Channel MOSFET 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R033M2HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R050M2HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R040M2HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R015M2HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R020M2HXKSA1
- Infineon IPZ Type N-Channel MOSFET 600 V Enhancement, 4-Pin PG-TO247-4 IPZA60R016CM8XKSA1