onsemi NTH Type N-Channel MOSFET, 51 A, 650 V N, 3-Pin TO-247-4L NTHL032N065M3S
- RS Stock No.:
- 327-809
- Mfr. Part No.:
- NTHL032N065M3S
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
SGD10.27
(exc. GST)
SGD11.19
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 71 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | SGD10.27 |
| 10 - 99 | SGD9.25 |
| 100 - 499 | SGD8.53 |
| 500 - 999 | SGD7.91 |
| 1000 + | SGD6.41 |
*price indicative
- RS Stock No.:
- 327-809
- Mfr. Part No.:
- NTHL032N065M3S
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 51A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | NTH | |
| Package Type | TO-247-4L | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 44mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.5V | |
| Maximum Power Dissipation Pd | 200W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 51A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series NTH | ||
Package Type TO-247-4L | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 44mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.5V | ||
Maximum Power Dissipation Pd 200W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ON Semiconductor SiC MOSFETs are optimized for fast switching applications, featuring planar technology that ensures reliable operation with negative gate voltage drive and turn-off spikes on the gate. This family of MOSFETs provides optimal performance when driven with an 18V gate drive but also works effectively with a 15V gate drive.
Halide Free and RoHS Compliant
15V to 18V Gate Drive
Related links
- onsemi NTH Type N-Channel MOSFET 650 V N, 4-Pin TO-247-4L NTH4L032N065M3S
- onsemi NTH Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247-4L NTH4L023N065M3S
- onsemi NTH Type N-Channel MOSFET 750 V Enhancement, 7-Pin TO-247-4L NTH4L018N075SC1
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247-4L NTH4L013N120M3S
- onsemi NTH Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247-3L NTHL023N065M3S
- onsemi NTH Type N-Channel MOSFET 1200 V N, 4-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V N, 4-Pin TO-247 NTH4L022N120M3S