onsemi NTH Type N-Channel MOSFET, 151 A, 1200 V Enhancement, 4-Pin TO-247-4L NTH4L013N120M3S
- RS Stock No.:
- 220-567
- Mfr. Part No.:
- NTH4L013N120M3S
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 1 unit)*
SGD47.89
(exc. GST)
SGD52.20
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 418 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Pack(s) | Per Pack |
|---|---|
| 1 - 9 | SGD47.89 |
| 10 - 99 | SGD43.11 |
| 100 + | SGD39.75 |
*price indicative
- RS Stock No.:
- 220-567
- Mfr. Part No.:
- NTH4L013N120M3S
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 151A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247-4L | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 682W | |
| Forward Voltage Vf | 4.7V | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Typical Gate Charge Qg @ Vgs | 254nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 16.2mm | |
| Width | 15.6 mm | |
| Standards/Approvals | Halide Free and RoHS with Exemption 7a | |
| Height | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 151A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247-4L | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 682W | ||
Forward Voltage Vf 4.7V | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Typical Gate Charge Qg @ Vgs 254nC | ||
Maximum Operating Temperature 175°C | ||
Length 16.2mm | ||
Width 15.6 mm | ||
Standards/Approvals Halide Free and RoHS with Exemption 7a | ||
Height 5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ON Semiconductor MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
Halide Free
RoHS Compliant
Related links
- onsemi NTH Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247-4L NTH4L023N065M3S
- onsemi NTH Type N-Channel MOSFET 750 V Enhancement, 7-Pin TO-247-4L NTH4L018N075SC1
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247 NTH4L060N065SC1