Infineon FZ1200 Type P-Channel MOSFET, 1.2 kA, 4500 V Depletion Tray FZ1200R45HL4S7BPSA1

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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
277-199
Mfr. Part No.:
FZ1200R45HL4S7BPSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

1.2kA

Maximum Drain Source Voltage Vds

4500V

Series

FZ1200

Package Type

Tray

Mount Type

Chassis

Channel Mode

Depletion

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2400kW

Minimum Operating Temperature

-40°C

Forward Voltage Vf

2.95V

Maximum Operating Temperature

150°C

Standards/Approvals

IEC 60749, IEC 60068, IEC 60747

Automotive Standard

No

COO (Country of Origin):
HU
The Infineon IGBT Module is a IHV-B 4500 V, 1200 A 190 mm single switch IGBT Module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and isolated AlSiC Base Plate. The best solution for your industry applications.

High power density

For compact inverter designs

Standardized housing

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