ROHM R65 1 Type N-Channel MOSFET, 125 A, 30 V Enhancement, 8-Pin HSMT-8 RH6E040BGTB1
- RS Stock No.:
- 265-310
- Mfr. Part No.:
- RH6E040BGTB1
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 10 units)*
SGD12.82
(exc. GST)
SGD13.97
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 100 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | SGD1.282 | SGD12.82 |
| 100 - 240 | SGD1.218 | SGD12.18 |
| 250 - 490 | SGD1.129 | SGD11.29 |
| 500 - 990 | SGD1.04 | SGD10.40 |
| 1000 + | SGD1.001 | SGD10.01 |
*price indicative
- RS Stock No.:
- 265-310
- Mfr. Part No.:
- RH6E040BGTB1
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 125A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | HSMT-8 | |
| Series | R65 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 30.0nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 78W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 125A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type HSMT-8 | ||
Series R65 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 30.0nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 78W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Number of Elements per Chip 1 | ||
The ROHM Power MOSFET features low on resistance and is housed in a compact, high power small mould package. It is well suited for a variety of applications, including switching, motor drives, and DC/DC converters, delivering efficient performance in space-constrained environments.
Pb free plating
RoHS compliant
High power small mould package
Low on resistance
100 percent Rg and UIS tested
Related links
- ROHM RH6 1 Type N-Channel MOSFET 60 V Enhancement, 8-Pin HSMT-8 RH6L040BGTB1
- ROHM RQ3 Type N-Channel MOSFET 60 V Enhancement, 8-Pin HSMT-8 RQ3L070BGTB1
- ROHM HT8KE6 2 Type N-Channel MOSFET Arrays 100 V Enhancement, 8-Pin HSMT-8 HT8KE6HTB1
- ROHM RQ3 Type N-Channel MOSFET 8-Pin HSMT-8 RQ3L060BGTB1
- ROHM RQ3 Type N-Channel MOSFET 60 V Enhancement, 8-Pin HSMT-8 RQ3L120BKFRATCB
- ROHM RQ3 Type N-Channel MOSFET 100 V Enhancement, 8-Pin HSMT-8 RQ3P270BKFRATCB
- ROHM HP8 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin HSMT-8 HT8KC5TB1
- ROHM HT8K 2 Type N-Channel MOSFET 100 V Enhancement, 8-Pin HSMT-8 HT8KE6TB1