ROHM HP8 2 Type N-Channel MOSFET, 10 A, 60 V Enhancement, 8-Pin HSMT-8 HT8KC5TB1
- RS Stock No.:
- 264-764
- Mfr. Part No.:
- HT8KC5TB1
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 10 units)*
SGD7.97
(exc. GST)
SGD8.69
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 100 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | SGD0.797 | SGD7.97 |
| 100 - 240 | SGD0.758 | SGD7.58 |
| 250 - 490 | SGD0.701 | SGD7.01 |
| 500 - 990 | SGD0.645 | SGD6.45 |
| 1000 + | SGD0.621 | SGD6.21 |
*price indicative
- RS Stock No.:
- 264-764
- Mfr. Part No.:
- HT8KC5TB1
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | HSMT-8 | |
| Series | HP8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 13W | |
| Typical Gate Charge Qg @ Vgs | 3.1nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type HSMT-8 | ||
Series HP8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 13W | ||
Typical Gate Charge Qg @ Vgs 3.1nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ROHM 60V 10A Dual Nch+Pch is a low on-resistance MOSFET ideal for switching applications.
High Power small mold Package (HSMT8)
Pb-free lead plating and RoHS compliant
Halogen Free
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