ROHM HP8 2 Type N-Channel MOSFET, 60 V Enhancement, 8-Pin HSOP-8 HP8KC6TB1
- RS Stock No.:
- 264-757
- Mfr. Part No.:
- HP8KC6TB1
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 5 units)*
SGD8.67
(exc. GST)
SGD9.45
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 100 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 45 | SGD1.734 | SGD8.67 |
| 50 - 95 | SGD1.648 | SGD8.24 |
| 100 - 495 | SGD1.526 | SGD7.63 |
| 500 - 995 | SGD1.406 | SGD7.03 |
| 1000 + | SGD1.354 | SGD6.77 |
*price indicative
- RS Stock No.:
- 264-757
- Mfr. Part No.:
- HP8KC6TB1
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | HP8 | |
| Package Type | HSOP-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 21W | |
| Typical Gate Charge Qg @ Vgs | 7.6nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 60V | ||
Series HP8 | ||
Package Type HSOP-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 21W | ||
Typical Gate Charge Qg @ Vgs 7.6nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ROHM 60V 23A Dual Nch+Nch is a low on-resistance MOSFET ideal for switching applications.
Small Surface Mount Package (HSOP8)
Pb-free lead plating and RoHS compliant
Halogen Free
Related links
- ROHM HP8 2 Type N-Channel MOSFET 8-Pin HSOP-8 HP8KC7TB1
- ROHM HP8 2 Type P 60 V Enhancement, 8-Pin HSOP-8 HP8MC5TB1
- ROHM HP8 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin HSOP-8 HP8KB7TB1
- ROHM Nch+Nch HP8 2 Type N-Channel MOSFET 8-Pin HSOP-8 HP8KB6TB1
- ROHM Dual (Nch+Pch) HP8 2 Type P 40 V Enhancement, 8-Pin HSOP-8 HP8MB5TB1
- ROHM HP8 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin HSMT-8 HT8KC5TB1
- ROHM HP8 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin TO-263 HT8KB5TB1
- ROHM HP8KC5 Dual N-Channel MOSFET 60 V Enhancement, 8-Pin HSOP-8 HP8KC5TB1