STMicroelectronics SCT N-Channel Power MOSFET, 30 A, 1.2 kV Enhancement, 7-Pin HU3PAK SCT070HU120G3AG
- RS Stock No.:
- 215-242
- Mfr. Part No.:
- SCT070HU120G3AG
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
SGD29.45
(exc. GST)
SGD32.10
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit |
|---|---|
| 1 - 9 | SGD29.45 |
| 10 - 99 | SGD26.50 |
| 100 + | SGD24.45 |
*price indicative
- RS Stock No.:
- 215-242
- Mfr. Part No.:
- SCT070HU120G3AG
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | HU3PAK | |
| Series | SCT | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 63mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Maximum Power Dissipation Pd | 23W | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Maximum Operating Temperature | 175°C | |
| Height | 3.5mm | |
| Length | 18.58mm | |
| Standards/Approvals | RoHS | |
| Width | 14mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type HU3PAK | ||
Series SCT | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 63mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Maximum Power Dissipation Pd 23W | ||
Maximum Gate Source Voltage Vgs 22V | ||
Maximum Operating Temperature 175°C | ||
Height 3.5mm | ||
Length 18.58mm | ||
Standards/Approvals RoHS | ||
Width 14mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
Related links
- STMicroelectronics Sct N-Channel Power MOSFET 650 V Enhancement, 7-Pin HU3PAK SCT018HU65G3AG
- STMicroelectronics SCT N-Channel MOSFET 750 V Enhancement, 7-Pin HU3PAK SCT060HU75G3AG
- ROHM SCT N-Channel MOSFET 1.2 kV Enhancement, 7-Pin TO-263
- ROHM SCT N-Channel MOSFET 1.2 kV Enhancement, 7-Pin TO-263 SCT3080KW7TL
- STMicroelectronics SCT N-Channel MOSFET 1.2 kV Enhancement, 4-Pin SCT070W120G3-4AG
- STMicroelectronics SCT N-Channel MOSFET 1.2 kV Enhancement, 7-Pin H2PAK-7 SCT040H120G3AG
- ROHM SCT N-Channel MOSFET 1.2 kV Enhancement, 7-Pin TO-263
- ROHM SCT N-Channel MOSFET 1.2 kV Enhancement, 7-Pin TO-263