STMicroelectronics SCT Type N-Channel MOSFET, 40 A, 1200 V Enhancement, 7-Pin H2PAK-7
- RS Stock No.:
- 215-232
- Mfr. Part No.:
- SCT040H120G3AG
- Manufacturer:
- STMicroelectronics
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SGD37.77
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Units | Per unit |
|---|---|
| 1 - 9 | SGD37.77 |
| 10 - 99 | SGD33.99 |
| 100 + | SGD31.36 |
*price indicative
- RS Stock No.:
- 215-232
- Mfr. Part No.:
- SCT040H120G3AG
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | H2PAK-7 | |
| Series | SCT | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2.6V | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.25mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Height | 4.8mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type H2PAK-7 | ||
Series SCT | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2.6V | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Operating Temperature 175°C | ||
Length 15.25mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Height 4.8mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
Related links
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