IXYS HiperFET Type N-Channel MOSFET, 24 A, 1 kV Enhancement, 4-Pin SOT-227 IXFN24N100

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Subtotal (1 unit)*

SGD68.97

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SGD75.18

(inc. GST)

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Per unit
1 - 9SGD68.97
10 - 49SGD67.52
50 - 99SGD66.09
100 - 249SGD64.72
250 +SGD63.37

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RS Stock No.:
194-091
Mfr. Part No.:
IXFN24N100
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

1kV

Package Type

SOT-227

Series

HiperFET

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

390mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

267nC

Maximum Power Dissipation Pd

568W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

38.23mm

Width

25.42 mm

Height

9.6mm

Automotive Standard

No

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