IXYS HiperFET Type N-Channel MOSFET, 36 A, 1 kV Enhancement, 4-Pin SOT-227 IXFN36N100

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Subtotal (1 unit)*

SGD107.94

(exc. GST)

SGD117.65

(inc. GST)

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2 - 4SGD104.69
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RS Stock No.:
193-795
Mfr. Part No.:
IXFN36N100
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

36A

Maximum Drain Source Voltage Vds

1kV

Series

HiperFET

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

240mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

700W

Typical Gate Charge Qg @ Vgs

380nC

Maximum Operating Temperature

150°C

Length

38.23mm

Height

9.6mm

Width

25.42 mm

Standards/Approvals

No

Automotive Standard

No

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