MPN

N-Channel MOSFET Transistor, 3 A, 500 V, 3-Pin TO-220NIS

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Subtotal 25 units (supplied in a bag)*

SGD18.75

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SGD20.50

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*price indicative

Specifications

Technical data sheets

Legislation and Compliance

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Toshiba
	Channel Type	N
	Maximum Continuous Drain Current	3 A
	Maximum Drain Source Voltage	500 V
	Package Type	TO-220NIS
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	3.2 Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation	25 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	9 nC @ 10 V
	Transistor Material	Si
	Width	4.5mm
	Length	10mm
	Minimum Operating Temperature	-55 °C
	Height	8.1mm

	Select all
	Brand Toshiba
	Channel Type N
	Maximum Continuous Drain Current 3 A
	Maximum Drain Source Voltage 500 V
	Package Type TO-220NIS
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 3.2 Ω
	Channel Mode Enhancement
	Maximum Power Dissipation 25 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 9 nC @ 10 V
	Transistor Material Si
	Width 4.5mm
	Length 10mm
	Minimum Operating Temperature -55 °C
	Height 8.1mm

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