Infineon FF50R12RT4HOSA1 Dual IGBT, 50 A 1200 V AG-34MM, Chassis Mount

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Bulk discount available

Subtotal (1 tray of 10 units)*

SGD1,244.32

(exc. GST)

SGD1,356.31

(inc. GST)

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  • Shipping from 22 November 2027
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Units
Per unit
Per Tray*
10 - 40SGD124.432SGD1,244.32
50 - 140SGD121.322SGD1,213.22
150 +SGD112.223SGD1,122.23

*price indicative

RS Stock No.:
260-8887
Mfr. Part No.:
FF50R12RT4HOSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

285 W

Number of Transistors

2

Package Type

AG-34MM

Configuration

Dual

Mounting Type

Chassis Mount

The infineon dual IGBT module is 34 mm 1200 V, 50 A fast TRENCHSTOP IGBT4 and emitter controlled 4 diode. VCEsat with positive temperature coefficient, it is flexibility, optimal electrical performance and highest reliability.

Extended operation temperature
Low switching losses
Low VCEsat
Isolated base plate
Standard housing

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