Infineon IKW50N65RH5XKSA1 Single IGBT Transistor Module, 50 A 650 V PG-TO247-3

Bulk discount available

Subtotal (1 tube of 30 units)*

SGD184.23

(exc. GST)

SGD200.82

(inc. GST)

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  • 210 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
30 - 30SGD6.141SGD184.23
60 - 60SGD6.034SGD181.02
90 - 150SGD5.877SGD176.31
180 - 330SGD5.57SGD167.10
360 +SGD4.989SGD149.67

*price indicative

RS Stock No.:
249-6940
Mfr. Part No.:
IKW50N65RH5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

15V

Maximum Power Dissipation

305 W

Number of Transistors

2

Package Type

PG-TO247-3

Configuration

Single

The Infineon TRENCHSTOP5 H5 IGBT co-packed with half-rated 6th generation CoolSiCTM schottky barrier diode. Ultra-low switching losses due to the combination of TRENCHSTOPTM5 and CoolSiCTM technology. Benchmark efficiency in hard switching topologies. Plug-and-play replacement of pure silicon devices. Maximum junction temperature is 175°C

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