Infineon IKW50N65ET7XKSA1 IGBT, 50 A 650 V, 3-Pin PG-TO-247
- RS Stock No.:
- 258-1018
- Mfr. Part No.:
- IKW50N65ET7XKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
SGD7.64
(exc. GST)
SGD8.33
(inc. GST)
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In Stock
- Plus 191 unit(s) shipping from 16 March 2026
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Units | Per unit |
|---|---|
| 1 - 1 | SGD7.64 |
| 2 - 4 | SGD6.87 |
| 5 - 9 | SGD6.50 |
| 10 - 14 | SGD5.63 |
| 15 + | SGD5.34 |
*price indicative
- RS Stock No.:
- 258-1018
- Mfr. Part No.:
- IKW50N65ET7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 50A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 273W | |
| Package Type | PG-TO-247 | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC | |
| Height | 5.3mm | |
| Width | 16.3 mm | |
| Length | 41.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 50A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 273W | ||
Package Type PG-TO-247 | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC | ||
Height 5.3mm | ||
Width 16.3 mm | ||
Length 41.9mm | ||
Automotive Standard No | ||
The Infineon hard-switching 650 V, 50 A TRENCHSTOP IGBT7 discrete in TO-247 package with soft EC7 diode inside. This price performance optimized range has premium controllability for the better EMI while switching losses are lower than the former technologies.
Low turn-off losses
Short tail current
Reduced EMI
Humidity robust design
Very soft, fast recovery anti-parallel diode
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