Infineon AIKW40N65DF5XKSA1, Type N-Channel IGBT, 74 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 215-6618
- Mfr. Part No.:
- AIKW40N65DF5XKSA1
- Manufacturer:
- Infineon
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SGD22.99
(exc. GST)
SGD25.06
(inc. GST)
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In Stock
- 126 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | SGD11.495 | SGD22.99 |
| 10 - 98 | SGD10.545 | SGD21.09 |
| 100 - 248 | SGD9.73 | SGD19.46 |
| 250 - 498 | SGD9.03 | SGD18.06 |
| 500 + | SGD8.775 | SGD17.55 |
*price indicative
- RS Stock No.:
- 215-6618
- Mfr. Part No.:
- AIKW40N65DF5XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 74A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 250W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 42mm | |
| Height | 5.21mm | |
| Standards/Approvals | AEC-Q101 | |
| Series | TrenchStop | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 74A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 250W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Length 42mm | ||
Height 5.21mm | ||
Standards/Approvals AEC-Q101 | ||
Series TrenchStop | ||
Automotive Standard AEC-Q101 | ||
The Infineon high speed F5 technology insulated-gate bipolar transistor offering best-in-class efficiency in hard switching and resonant topologies.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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