Infineon IKP40N65F5XKSA1, Type N-Channel IGBT, 74 A 650 V, 3-Pin TO-220, Through Hole
- RS Stock No.:
- 226-6107
- Mfr. Part No.:
- IKP40N65F5XKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD31.72
(exc. GST)
SGD34.575
(inc. GST)
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- Shipping from 04 August 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 10 | SGD6.344 | SGD31.72 |
| 15 - 20 | SGD6.106 | SGD30.53 |
| 25 + | SGD5.724 | SGD28.62 |
*price indicative
- RS Stock No.:
- 226-6107
- Mfr. Part No.:
- IKP40N65F5XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 74A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 255W | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 30 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC | |
| Series | High Speed Fifth Generation | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 74A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 255W | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 30 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC | ||
Series High Speed Fifth Generation | ||
Automotive Standard No | ||
The Infineon IKP40N65F5 is 650 V high speed hard switching IGBT which used co-packed with rapid si-diode technology. It has higher power density design and has low COES/EOSS.
Factor 2.5 lower Qg
Factor 2 reduction in switching losses
200mV reduction in VCEsat
Related links
- Infineon 74 A 650 V Through Hole
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- Infineon 74 A 650 V Through Hole
- Infineon IKP40N65H5XKSA1 74 A 650 V Through Hole
- Infineon 74 A 650 V Through Hole