STMicroelectronics, Type N-Channel IGBT, 54 A 600 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

SGD85.14

(exc. GST)

SGD92.79

(inc. GST)

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Units
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Per Tube*
30 - 60SGD2.838SGD85.14
90 - 120SGD2.731SGD81.93
150 +SGD2.561SGD76.83

*price indicative

RS Stock No.:
168-6464
Mfr. Part No.:
STGW20NC60VD
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

54A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

167W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

70ns

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.7V

Maximum Operating Temperature

150°C

Length

15.75mm

Standards/Approvals

JEDEC

Height

20.15mm

Series

SMPS

Width

5.15 mm

Automotive Standard

No

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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