STMicroelectronics STGW60V60F, Type N-Channel IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 5 units)*

SGD35.82

(exc. GST)

SGD39.045

(inc. GST)

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Units
Per unit
Per Pack*
5 - 20SGD7.164SGD35.82
25 - 45SGD6.948SGD34.74
50 - 245SGD6.67SGD33.35
250 - 495SGD6.338SGD31.69
500 +SGD5.956SGD29.78

*price indicative

Packaging Options:
RS Stock No.:
791-7655
Mfr. Part No.:
STGW60V60F
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

80A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

375W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Collector Emitter Saturation Voltage VceSAT

2.3V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

175°C

Length

14.8mm

Height

20.15mm

Width

15.75 mm

Standards/Approvals

ECOPACK

Series

V

Automotive Standard

No

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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