STMicroelectronics STGW40V60DF, Type N-Channel IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 5 units)*

SGD27.36

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SGD29.82

(inc. GST)

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Per unit
Per Pack*
5 - 10SGD5.472SGD27.36
15 - 20SGD5.268SGD26.34
25 +SGD4.938SGD24.69

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Packaging Options:
RS Stock No.:
791-7637
Mfr. Part No.:
STGW40V60DF
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

80A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

283W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.3V

Maximum Operating Temperature

175°C

Series

V

Standards/Approvals

Lead free package

Length

15.75mm

Height

20.15mm

Width

5.15 mm

Automotive Standard

No

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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