Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Memory Size	256kbit
	Organisation	32K x 8 bit
	Interface Type	SPI
	Data Bus Width	8bit
	Maximum Random Access Time	16ns
	Mounting Type	Surface Mount
	Package Type	DFN
	Pin Count	8
	Dimensions	4.5 x 4 x 0.75mm
	Length	4.5mm
	Maximum Operating Supply Voltage	3.6 V
	Width	4mm
	Height	0.75mm
	Maximum Operating Temperature	+85 °C
	Number of Words	32k
	Minimum Operating Supply Voltage	2 V
	Number of Bits per Word	8bit
	Minimum Operating Temperature	-40 °C

	Select all
	Brand Infineon
	Memory Size 256kbit
	Organisation 32K x 8 bit
	Interface Type SPI
	Data Bus Width 8bit
	Maximum Random Access Time 16ns
	Mounting Type Surface Mount
	Package Type DFN
	Pin Count 8
	Dimensions 4.5 x 4 x 0.75mm
	Length 4.5mm
	Maximum Operating Supply Voltage 3.6 V
	Width 4mm
	Height 0.75mm
	Maximum Operating Temperature +85 °C
	Number of Words 32k
	Minimum Operating Supply Voltage 2 V
	Number of Bits per Word 8bit
	Minimum Operating Temperature -40 °C

Datasheet FM25V02A-DG

FRAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

256-Kbit ferroelectric random access memory (F-RAM)
Logically organized as 32K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 40-MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write-protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID
Manufacturer ID and Product ID
Low power consumption
2.5-mA active current at 40 MHz
150-μA standby current
8-μA sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin dual flat no-leads (DFN) package

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Units	Per unit	Per Tube*
81 - 81	SGD8.199	SGD664.12
162 - 243	SGD7.953	SGD644.19
324 - 486	SGD7.714	SGD624.83
567 - 972	SGD7.482	SGD606.04
1053 +	SGD7.258	SGD587.90

Infineon 256kbit SPI FRAM Memory 8-Pin DFN, FM25V02A-DG

FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28

FRAM, Cypress Semiconductor

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.