Infineon 64kbit SPI FRAM Memory 8-Pin DFN, FM25CL64B-DG
- RS Stock No.:
- 188-5412
- Mfr. Part No.:
- FM25CL64B-DG
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 tube of 81 units)*
SGD419.256
(exc. GST)
SGD457.002
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 648 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 81 - 81 | SGD5.176 | SGD419.26 |
| 162 - 486 | SGD4.647 | SGD376.41 |
| 567 - 972 | SGD4.44 | SGD359.64 |
| 1053 + | SGD4.21 | SGD341.01 |
*price indicative
- RS Stock No.:
- 188-5412
- Mfr. Part No.:
- FM25CL64B-DG
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 64kbit | |
| Organisation | 8K x 8 bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 20ns | |
| Mounting Type | Surface Mount | |
| Package Type | DFN | |
| Pin Count | 8 | |
| Dimensions | 4.5 x 4 x 0.75mm | |
| Length | 4.5mm | |
| Maximum Operating Supply Voltage | 3.65 V | |
| Width | 4mm | |
| Height | 0.75mm | |
| Maximum Operating Temperature | +85 °C | |
| Automotive Standard | AEC-Q100 | |
| Number of Words | 8k | |
| Minimum Operating Supply Voltage | 2.7 V | |
| Number of Bits per Word | 8bit | |
| Minimum Operating Temperature | -40 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 64kbit | ||
Organisation 8K x 8 bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 20ns | ||
Mounting Type Surface Mount | ||
Package Type DFN | ||
Pin Count 8 | ||
Dimensions 4.5 x 4 x 0.75mm | ||
Length 4.5mm | ||
Maximum Operating Supply Voltage 3.65 V | ||
Width 4mm | ||
Height 0.75mm | ||
Maximum Operating Temperature +85 °C | ||
Automotive Standard AEC-Q100 | ||
Number of Words 8k | ||
Minimum Operating Supply Voltage 2.7 V | ||
Number of Bits per Word 8bit | ||
Minimum Operating Temperature -40 °C | ||
- COO (Country of Origin):
- US
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 20 MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Low power consumption
200 μA active current at 1 MHz
3 μA (typ) standby current
Low-voltage operation: VDD = 2.7 V to 3.65 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin thin dual flat no leads (DFN) package
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 20 MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Low power consumption
200 μA active current at 1 MHz
3 μA (typ) standby current
Low-voltage operation: VDD = 2.7 V to 3.65 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin thin dual flat no leads (DFN) package
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.