Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Memory Size	2Mbit
	Organisation	256k x 8 bit
	Interface Type	SPI
	Data Bus Width	8bit
	Maximum Random Access Time	16ns
	Mounting Type	Surface Mount
	Package Type	DFN
	Pin Count	8
	Dimensions	6 x 5 x 0.7mm
	Length	5mm
	Maximum Operating Supply Voltage	3.6 V
	Width	6mm
	Height	0.7mm
	Maximum Operating Temperature	+85 °C
	Minimum Operating Temperature	-40 °C
	Minimum Operating Supply Voltage	2 V
	Automotive Standard	AEC-Q100
	Number of Bits per Word	8bit
	Number of Words	256k

	Select all
	Brand Infineon
	Memory Size 2Mbit
	Organisation 256k x 8 bit
	Interface Type SPI
	Data Bus Width 8bit
	Maximum Random Access Time 16ns
	Mounting Type Surface Mount
	Package Type DFN
	Pin Count 8
	Dimensions 6 x 5 x 0.7mm
	Length 5mm
	Maximum Operating Supply Voltage 3.6 V
	Width 6mm
	Height 0.7mm
	Maximum Operating Temperature +85 °C
	Minimum Operating Temperature -40 °C
	Minimum Operating Supply Voltage 2 V
	Automotive Standard AEC-Q100
	Number of Bits per Word 8bit
	Number of Words 256k

Datasheet FM25V20A-DG

FRAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention (See the Data Retention and Endurance table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast SPI
Up to 40-MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID
Manufacturer ID and Product ID
Low power consumption
300 μA active current at 1 MHz
100 μA (typ) standby current
3 μA sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin dual flat no leads (DFN) package

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Units	Per unit	Per Tube*
74 - 74	SGD27.78	SGD2,055.72
148 +	SGD24.299	SGD1,798.13

Infineon 2Mbit SPI FRAM Memory 8-Pin DFN, FM25V20A-DG

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FRAM, Cypress Semiconductor

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.