Infineon RF Bipolar Transistor, 65 mA NPN, 20 V, 4-Pin SOT-343
- RS Stock No.:
- 273-7296
- Mfr. Part No.:
- BFP183WH6327XTSA1
- Manufacturer:
- Infineon
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SGD6.00
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SGD6.50
(inc. GST)
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In Stock
- Plus 12,000 unit(s) shipping from 08 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | SGD0.24 | SGD6.00 |
| 50 - 75 | SGD0.233 | SGD5.83 |
| 100 - 225 | SGD0.219 | SGD5.48 |
| 250 - 975 | SGD0.20 | SGD5.00 |
| 1000 + | SGD0.176 | SGD4.40 |
*price indicative
- RS Stock No.:
- 273-7296
- Mfr. Part No.:
- BFP183WH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 65mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Minimum DC Current Gain hFE | 70 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 450mW | |
| Maximum Transition Frequency ft | 8GHz | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Series | BFP183W | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 65mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Maximum Collector Base Voltage VCBO 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Minimum DC Current Gain hFE 70 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 450mW | ||
Maximum Transition Frequency ft 8GHz | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Series BFP183W | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon Silicon RF Transistor designed for low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA. This silicon RF transistor has qualification report according to AEC Q101.
Halogen free
Pb free package
RoHS compliant
Available with visible leads
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