Infineon BFP196WH6327XTSA1 RF Bipolar Transistor, 150 mA NPN, 20 V, 4-Pin SOT-343
- RS Stock No.:
- 259-1417
- Distrelec Article No.:
- 304-40-484
- Mfr. Part No.:
- BFP196WH6327XTSA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
SGD6.875
(exc. GST)
SGD7.50
(inc. GST)
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Last RS stock
- Final 75 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | SGD0.275 | SGD6.88 |
| 50 - 75 | SGD0.267 | SGD6.68 |
| 100 - 225 | SGD0.256 | SGD6.40 |
| 250 - 975 | SGD0.244 | SGD6.10 |
| 1000 + | SGD0.229 | SGD5.73 |
*price indicative
- RS Stock No.:
- 259-1417
- Distrelec Article No.:
- 304-40-484
- Mfr. Part No.:
- BFP196WH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 150mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Maximum Transition Frequency ft | 7.5GHz | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Minimum Operating Temperature | -60°C | |
| Minimum DC Current Gain hFE | 70 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 700mW | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Length | 2.1mm | |
| Height | 0.9mm | |
| Standards/Approvals | RoHS | |
| Series | BFP196W | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 150mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 20V | ||
Maximum Transition Frequency ft 7.5GHz | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Minimum Operating Temperature -60°C | ||
Minimum DC Current Gain hFE 70 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 700mW | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Length 2.1mm | ||
Height 0.9mm | ||
Standards/Approvals RoHS | ||
Series BFP196W | ||
Automotive Standard AEC-Q101 | ||
The Infineon NPN silicon RF transistor is used for low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA.
Power amplifier for DECT and PCN systems
Pb-free (RoHS compliant) package
Related links
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- Infineon RF Bipolar Transistor 20 V, 4-Pin SOT-343