Infineon BFR380L3E6327XTMA1 Bipolar Transistor, 80 mA NPN, 15 V, 3-Pin TSLP-3-1
- RS Stock No.:
- 258-7750
- Distrelec Article No.:
- 304-40-493
- Mfr. Part No.:
- BFR380L3E6327XTMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
SGD6.35
(exc. GST)
SGD6.925
(inc. GST)
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In Stock
- Plus 15,000 unit(s) shipping from 15 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 975 | SGD0.254 | SGD6.35 |
| 1000 - 1975 | SGD0.246 | SGD6.15 |
| 2000 - 4975 | SGD0.236 | SGD5.90 |
| 5000 - 9975 | SGD0.224 | SGD5.60 |
| 10000 + | SGD0.211 | SGD5.28 |
*price indicative
- RS Stock No.:
- 258-7750
- Distrelec Article No.:
- 304-40-493
- Mfr. Part No.:
- BFR380L3E6327XTMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 80mA | |
| Maximum Collector Emitter Voltage Vceo | 15V | |
| Package Type | TSLP-3-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 15V | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Minimum DC Current Gain hFE | 160 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 380mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 14GHz | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Height | 0.4mm | |
| Length | 1mm | |
| Series | BFR380L3 | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 80mA | ||
Maximum Collector Emitter Voltage Vceo 15V | ||
Package Type TSLP-3-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 15V | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Minimum DC Current Gain hFE 160 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 380mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 14GHz | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Height 0.4mm | ||
Length 1mm | ||
Series BFR380L3 | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon low profile linear silicon NPN RF bipolar transistor is a low noise device based on Si that is part of Infineon’s established third generation RF bipolar transistor family. Its high transition frequency and low current and low noise characteristics make the device suitable for a broad range of applications as high as 3.5 GHz. It remains cost competitive without compromising on ease of use.
High current capability and low noise figure for wide dynamic range
Low voltage operation
Pb free RoHS compliant package
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