Infineon BFR840L3RHESDE6327XTSA1 RF Bipolar Transistor, 35 mA NPN, 2.25 V, 3-Pin TSLP-3-9
- RS Stock No.:
- 258-0650
- Mfr. Part No.:
- BFR840L3RHESDE6327XTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
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Subtotal (1 pack of 10 units)*
SGD8.16
(exc. GST)
SGD8.89
(inc. GST)
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In Stock
- 12,890 unit(s) ready to ship from another location
- Plus 15,000 unit(s) shipping from 01 October 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD0.816 | SGD8.16 |
| 20 - 90 | SGD0.748 | SGD7.48 |
| 100 - 240 | SGD0.697 | SGD6.97 |
| 250 - 490 | SGD0.611 | SGD6.11 |
| 500 + | SGD0.569 | SGD5.69 |
*price indicative
- RS Stock No.:
- 258-0650
- Mfr. Part No.:
- BFR840L3RHESDE6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 35mA | |
| Maximum Collector Emitter Voltage Vceo | 2.25V | |
| Package Type | TSLP-3-9 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 2.9V | |
| Maximum Transition Frequency ft | 75GHz | |
| Minimum DC Current Gain hFE | 150 | |
| Transistor Polarity | NPN | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 75mW | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Length | 1mm | |
| Height | 0.31mm | |
| Series | BFR840L3RHESD | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 35mA | ||
Maximum Collector Emitter Voltage Vceo 2.25V | ||
Package Type TSLP-3-9 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 2.9V | ||
Maximum Transition Frequency ft 75GHz | ||
Minimum DC Current Gain hFE 150 | ||
Transistor Polarity NPN | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 75mW | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Length 1mm | ||
Height 0.31mm | ||
Series BFR840L3RHESD | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon SiGe C NPN RF bipolar transistor is a discrete RF heterojunction bipolar transistor with an integrated ESD protection suitable for 5 GHz band applications.
Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V
Low profile and small form factor leadless package
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