Infineon Silicon Junction, Single, 80 A, 2-Pin 650 V TO-220 IDP40E65D2XKSA1
- RS Stock No.:
- 110-7096
- Mfr. Part No.:
- IDP40E65D2XKSA1
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 10 units)*
SGD20.89
(exc. GST)
SGD22.77
(inc. GST)
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In Stock
- 100 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD2.089 | SGD20.89 |
| 20 - 90 | SGD1.973 | SGD19.73 |
| 100 - 190 | SGD1.727 | SGD17.27 |
| 200 - 490 | SGD1.658 | SGD16.58 |
| 500 + | SGD1.579 | SGD15.79 |
*price indicative
- RS Stock No.:
- 110-7096
- Mfr. Part No.:
- IDP40E65D2XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Diode Configuration | Single | |
| Product Type | Silicon Junction | |
| Maximum Forward Current If | 80A | |
| Mount Type | Through Hole | |
| Sub Type | Silicon Junction | |
| Package Type | TO-220 | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 250A | |
| Minimum Operating Temperature | -40°C | |
| Peak Reverse Recovery Time trr | 83ns | |
| Maximum Forward Voltage Vf | 2.2V | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Maximum Power Dissipation Pd | 200W | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.95mm | |
| Standards/Approvals | No | |
| Length | 10.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Diode Configuration Single | ||
Product Type Silicon Junction | ||
Maximum Forward Current If 80A | ||
Mount Type Through Hole | ||
Sub Type Silicon Junction | ||
Package Type TO-220 | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 250A | ||
Minimum Operating Temperature -40°C | ||
Peak Reverse Recovery Time trr 83ns | ||
Maximum Forward Voltage Vf 2.2V | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 650V | ||
Maximum Power Dissipation Pd 200W | ||
Maximum Operating Temperature 175°C | ||
Height 15.95mm | ||
Standards/Approvals No | ||
Length 10.2mm | ||
Automotive Standard No | ||
Fast Switching Emitter Controlled Diodes, Infineon
The Infineon switching emitter controlled diodes are the Rapid 1 and the Rapid 2 families also the 600 V/1200 V Ultra-soft diodes. The diodes work in various applications from Telecom, UPS, welding, AC-DC and the Ultra-soft version works on motor drive applications up to 30 kHz.
Rapid 1 diode switches between 18kHz and 40kHz
1.35V temperature-stable forward voltage
Ideal for Power Factor Correction (PFC) topologies
The Rapid 2 diode switches between 40 kHz and 100 kHz
Low reverse recovery charge: forward voltage ratio for BiC performance
Low reverse recovery time
Low turn-on losses on the boost switch
Ultra-fast Diode 600 V/1200 V Emitter Controlled technology
Qualified according to JEDEC Standard
Good EMI behaviour
Low conduction losses
Easy paralleling
Diodes and Rectifiers, Infineon
Related links
- Infineon Silicon Junction 80 A, 2-Pin 650 V TO-220
- Infineon Silicon Junction 80 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 80 A, 3-Pin 650 V TO-247 IDW80C65D2XKSA1
- Infineon Silicon Junction 80 A, 3-Pin 650 V TO-247 IDW40E65D2FKSA1
- Infineon Silicon Junction 60 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 60 A, 3-Pin 650 V TO-247 IDW30E65D1FKSA1
- Infineon Silicon Junction 15 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 15 A, 3-Pin 650 V TO-247 IDW15E65D2FKSA1