Infineon 650 V 12 A Rectifier & Schottky Diode Rectifier Diode 2-Pin TO-220
- RS Stock No.:
- 273-2953
- Mfr. Part No.:
- IDW12G65C5XKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
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Subtotal (1 unit)*
SGD7.31
(exc. GST)
SGD7.97
(inc. GST)
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In Stock
- 240 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 4 | SGD7.31 |
| 5 - 9 | SGD7.16 |
| 10 - 24 | SGD6.66 |
| 25 - 49 | SGD6.10 |
| 50 + | SGD5.62 |
*price indicative
- RS Stock No.:
- 273-2953
- Mfr. Part No.:
- IDW12G65C5XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Mount Type | Through Hole | |
| Product Type | Rectifier & Schottky Diode | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 12A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | 5th Generation thinQ!TM | |
| Diode Configuration | Single | |
| Rectifier Type | Rectifier Diode | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 71A | |
| Maximum Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 1350μA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Mount Type Through Hole | ||
Product Type Rectifier & Schottky Diode | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 12A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series 5th Generation thinQ!TM | ||
Diode Configuration Single | ||
Rectifier Type Rectifier Diode | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 71A | ||
Maximum Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 1350μA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon SiC schottky barrier diode has compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit. It ha
Highest softness factor for ultimate softness and low EMI filtering
For applications switching between 18 kHz and 40 kHz
Related links
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