Infineon 4 V 110 mA Diode 4-Pin SOT-143 BAT15099RE6327HTSA1
- RS Stock No.:
- 261-3925
- Mfr. Part No.:
- BAT15099RE6327HTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD8.16
(exc. GST)
SGD8.89
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 2,950 unit(s) shipping from 27 April 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD0.816 | SGD8.16 |
| 20 - 90 | SGD0.735 | SGD7.35 |
| 100 - 240 | SGD0.662 | SGD6.62 |
| 250 - 490 | SGD0.595 | SGD5.95 |
| 500 + | SGD0.536 | SGD5.36 |
*price indicative
- RS Stock No.:
- 261-3925
- Mfr. Part No.:
- BAT15099RE6327HTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | SOT-143 | |
| Maximum Continuous Forward Current If | 110mA | |
| Peak Reverse Repetitive Voltage Vrrm | 4V | |
| Diode Configuration | Cross Over Ring | |
| Series | BAT15-099R | |
| Pin Count | 4 | |
| Maximum Forward Voltage Vf | 0.32V | |
| Peak Reverse Current Ir | 5μA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.9mm | |
| Height | 1mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type SOT-143 | ||
Maximum Continuous Forward Current If 110mA | ||
Peak Reverse Repetitive Voltage Vrrm 4V | ||
Diode Configuration Cross Over Ring | ||
Series BAT15-099R | ||
Pin Count 4 | ||
Maximum Forward Voltage Vf 0.32V | ||
Peak Reverse Current Ir 5μA | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 2.9mm | ||
Height 1mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for over-voltage protection. Their low barrier height, low forward voltage and low junction capacitance make a suitable choice for mixer functions in applications which frequencies are as high as 12 GHz.
RoHS compliant and halogen-free
Low capacitance and inductance
Related links
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