Infineon 1200 V 40 A Diode Schottky 2-Pin TO-247 IDWD40G120C5XKSA1
- RS Stock No.:
- 222-4846
- Mfr. Part No.:
- IDWD40G120C5XKSA1
- Manufacturer:
- Infineon
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Subtotal (1 unit)*
SGD17.88
(exc. GST)
SGD19.49
(inc. GST)
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In Stock
- 237 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 9 | SGD17.88 |
| 10 - 99 | SGD17.43 |
| 100 - 249 | SGD17.00 |
| 250 - 499 | SGD16.59 |
| 500 + | SGD16.18 |
*price indicative
- RS Stock No.:
- 222-4846
- Mfr. Part No.:
- IDWD40G120C5XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 40A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | IDWD40G120C5 | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 290A | |
| Maximum Forward Voltage Vf | 1.7V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Length | 40.21mm | |
| Width | 15.8 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 40A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series IDWD40G120C5 | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 290A | ||
Maximum Forward Voltage Vf 1.7V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Length 40.21mm | ||
Width 15.8 mm | ||
Automotive Standard No | ||
The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 40 A in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes. The expanded 8.7 mm creepage and clearance distances in this package offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative.
No reverse recovery current, no forward recovery voltage
Temperature-independent switching behaviour
Low forward voltage even at high operating temperature
Tight forward voltage distribution
High surge current capability
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