Infineon 1200 V 30 A SiC Diode Schottky 2-Pin TO-247

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Subtotal (1 tube of 30 units)*

SGD308.70

(exc. GST)

SGD336.60

(inc. GST)

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Units
Per unit
Per Tube*
30 - 60SGD10.29SGD308.70
90 - 120SGD10.128SGD303.84
150 - 270SGD9.861SGD295.83
300 - 570SGD9.342SGD280.26
600 +SGD8.359SGD250.77

*price indicative

RS Stock No.:
222-4843
Mfr. Part No.:
IDWD30G120C5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

SiC Diode

Mount Type

Surface

Package Type

TO-247

Maximum Continuous Forward Current If

30A

Peak Reverse Repetitive Voltage Vrrm

1200V

Diode Configuration

Single

Series

5th Generation CoolSiC 1200V Schottky Diode

Rectifier Type

Schottky

Pin Count

2

Minimum Operating Temperature

-55°C

Maximum Forward Voltage Vf

1.65V

Peak Non-Repetitive Forward Surge Current Ifsm

240A

Peak Reverse Current Ir

248μA

Maximum Operating Temperature

175°C

Length

40.21mm

Width

15.8 mm

Standards/Approvals

JEDEC47/20/22

Automotive Standard

No

The Infineon CoolSiC™ Schottky diodes generation 5 1200 V, 30 A is also available in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes. The expanded 8.7 mm creepage and clearance distances in the new package offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative.

No reverse recovery current, no forward recovery voltage

Temperature-independent switching behaviour

Low forward voltage even at high operating temperature

Tight forward voltage distribution

High surge current capability

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