STMicroelectronics 650 V 6 A Schottky Diode SiC Schottky 2-Pin TO-220 STPSC6G065D
- RS Stock No.:
- 719-665
- Mfr. Part No.:
- STPSC6G065D
- Manufacturer:
- STMicroelectronics
N
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Units | Per unit |
|---|---|
| 1 - 24 | SGD1.42 |
| 25 - 99 | SGD1.27 |
| 100 - 499 | SGD1.14 |
| 500 - 999 | SGD0.92 |
| 1000 + | SGD0.90 |
*price indicative
- RS Stock No.:
- 719-665
- Mfr. Part No.:
- STPSC6G065D
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Schottky Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 6A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Silicon Carbide Schottky Diode | |
| Series | STPSC | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 240μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 410A | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.6mm | |
| Length | 15.75mm | |
| Width | 10.4 mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Schottky Diode | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 6A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Silicon Carbide Schottky Diode | ||
Series STPSC | ||
Rectifier Type SiC Schottky | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 240μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 410A | ||
Maximum Operating Temperature 175°C | ||
Height 4.6mm | ||
Length 15.75mm | ||
Width 10.4 mm | ||
- COO (Country of Origin):
- CN
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
No reverse recovery charge in application current range
Switching behaviour independent of temperature
High forward surge capability
ECOPACK2 compliant component