STMicroelectronics 650 V 10 A Schottky Diode SiC Schottky 2-Pin TO-220 STPSC10G065D
- RS Stock No.:
- 719-659
- Mfr. Part No.:
- STPSC10G065D
- Manufacturer:
- STMicroelectronics
N
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- 300 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 9 | SGD2.02 |
| 10 - 24 | SGD1.78 |
| 25 - 99 | SGD1.59 |
| 100 - 499 | SGD1.29 |
| 500 + | SGD1.27 |
*price indicative
- RS Stock No.:
- 719-659
- Mfr. Part No.:
- STPSC10G065D
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Schottky Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Silicon Carbide Schottky Diode | |
| Series | STPSC | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 425μA | |
| Maximum Forward Voltage Vf | 1.3V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 650A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.75mm | |
| Width | 10.4 mm | |
| Height | 4.6mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Schottky Diode | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Silicon Carbide Schottky Diode | ||
Series STPSC | ||
Rectifier Type SiC Schottky | ||
Pin Count 2 | ||
Peak Reverse Current Ir 425μA | ||
Maximum Forward Voltage Vf 1.3V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 650A | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 15.75mm | ||
Width 10.4 mm | ||
Height 4.6mm | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature Based on latest technology optimization, this diode has an improved forward surge current capability, making it Ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions.
None or negligible reverse recovery charge in application current range
Switching behaviour independent of temperature
High forward surge capability
ECOPACK2 compliant component