STMicroelectronics STDRIVEG611QTRHigh Side, High Side Power Switch IC 18-Pin, QFN

The STMicroelectronics High voltage and high-speed half-bridge gate driver for GaN power switches is a high-voltage half-bridge gate driver for N‑channel Enhancement Mode GaN. The high-side driver section is designed to stand a voltage rail up to 600 V and can be easily supplied by the integrated bootstrap diode. High current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG611 optimized for driving high-speed GaN.

High-side and low-side linear regulators for 6 V gate driving voltage
Fast high-side startup time 5 μs
45 ns propagation delay 15 ns minimum output pulse
High switching frequency (greater than 1 MHz)
Embedded 600 V bootstrap diode
Full support of GaN hard-switching operation
Comparator for overcurrent detection with Smart Shutdown
UVLO function on VCC, VHS, and VLS
Separated logic inputs and shutdown pin
Fault pin for overcurrent, over temperature and UVLO reporting
Stand-by function for low consumption mode