Texas Instruments NexFET N-Channel MOSFET, 75 A, 40 V, 8-Pin VSONP CSD18504Q5A
- RS Stock No.:
- 921-3066
- Mfr. Part No.:
- CSD18504Q5A
- Manufacturer:
- Texas Instruments
Bulk discount available
Subtotal (1 reel of 2500 units)*
SGD1,965.00
(exc. GST)
SGD2,142.50
(inc. GST)
FREE delivery for orders over $150.00
Temporarily out of stock
- Shipping from 23 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 5000 | SGD0.786 | SGD1,965.00 |
| 7500 - 10000 | SGD0.757 | SGD1,892.50 |
| 12500 + | SGD0.709 | SGD1,772.50 |
*price indicative
- RS Stock No.:
- 921-3066
- Mfr. Part No.:
- CSD18504Q5A
- Manufacturer:
- Texas Instruments
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Texas Instruments | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 75 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | VSONP | |
| Series | NexFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 9.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.4V | |
| Minimum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 3.1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 7.7 nC @ 4.5 V | |
| Length | 5.8mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 5mm | |
| Height | 1.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Texas Instruments | ||
Channel Type N | ||
Maximum Continuous Drain Current 75 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type VSONP | ||
Series NexFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 9.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.4V | ||
Minimum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 3.1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 7.7 nC @ 4.5 V | ||
Length 5.8mm | ||
Maximum Operating Temperature +150 °C | ||
Width 5mm | ||
Height 1.1mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MY
N-Channel NexFET™ Power MOSFET, Texas Instruments
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
MOSFET Transistors, Texas Instruments
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