STMicroelectronics Type N-Channel MOSFET, 6.5 A, 1 kV Enhancement, 3-Pin TO-220
- RS Stock No.:
- 920-6667
- Mfr. Part No.:
- STF8NK100Z
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
SGD271.70
(exc. GST)
SGD296.15
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 50 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 100 | SGD5.434 | SGD271.70 |
| 150 - 200 | SGD5.23 | SGD261.50 |
| 250 + | SGD4.903 | SGD245.15 |
*price indicative
- RS Stock No.:
- 920-6667
- Mfr. Part No.:
- STF8NK100Z
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.85Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 40W | |
| Typical Gate Charge Qg @ Vgs | 102nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Height | 16.4mm | |
| Standards/Approvals | No | |
| Width | 4.6 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.85Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 40W | ||
Typical Gate Charge Qg @ Vgs 102nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Height 16.4mm | ||
Standards/Approvals No | ||
Width 4.6 mm | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-220 STF8NK100Z
- STMicroelectronics Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-220 STP8NK100Z
- STMicroelectronics Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-220 STF5NK100Z
- STMicroelectronics Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-220 STP5NK100Z
- STMicroelectronics Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-220 STF3NK100Z