STMicroelectronics MDmesh Type N-Channel MOSFET, 4 A, 1500 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 920-6645
- Mfr. Part No.:
- STP4N150
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
SGD342.50
(exc. GST)
SGD373.50
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 22 April 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | SGD6.85 | SGD342.50 |
| 100 - 150 | SGD6.713 | SGD335.65 |
| 200 - 450 | SGD6.579 | SGD328.95 |
| 500 - 950 | SGD6.447 | SGD322.35 |
| 1000 + | SGD6.318 | SGD315.90 |
*price indicative
- RS Stock No.:
- 920-6645
- Mfr. Part No.:
- STP4N150
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 1500V | |
| Package Type | TO-220 | |
| Series | MDmesh | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 160W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 15.75mm | |
| Standards/Approvals | No | |
| Width | 4.6 mm | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 1500V | ||
Package Type TO-220 | ||
Series MDmesh | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 160W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 2V | ||
Maximum Operating Temperature 150°C | ||
Height 15.75mm | ||
Standards/Approvals No | ||
Width 4.6 mm | ||
Length 10.4mm | ||
Automotive Standard No | ||
N-Channel MDmesh™, 800V/1500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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