IXYS Type N-Channel MOSFET, 26 A, 500 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 920-0773
- Mfr. Part No.:
- IXFH26N50P
- Manufacturer:
- IXYS
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 30 units)*
SGD244.26
(exc. GST)
SGD266.25
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 30 unit(s) shipping from 29 December 2025
- Plus 270 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | SGD8.142 | SGD244.26 |
| 60 - 120 | SGD7.898 | SGD236.94 |
| 150 - 270 | SGD7.661 | SGD229.83 |
| 300 + | SGD7.431 | SGD222.93 |
*price indicative
- RS Stock No.:
- 920-0773
- Mfr. Part No.:
- IXFH26N50P
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 230mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 400W | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.26mm | |
| Width | 5.3 mm | |
| Standards/Approvals | No | |
| Height | 21.46mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 230mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 400W | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 16.26mm | ||
Width 5.3 mm | ||
Standards/Approvals No | ||
Height 21.46mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247 IXFH26N50P
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247 IXFH26N50P3
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-3P
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-3P IXFQ26N50P3
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220 IXFP26N50P3
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247