IRLML6401TRPBF P-Channel MOSFET, 4.3 A, 12 V HEXFET, 3-Pin Micro Infineon

  • RS Stock No. 919-4713
  • Mfr. Part No. IRLML6401TRPBF
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): PH
Product Details

P-Channel Power MOSFET 12V to 20V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type P
Maximum Continuous Drain Current 4.3 A
Maximum Drain Source Voltage 12 V
Maximum Drain Source Resistance 50 mΩ
Maximum Gate Threshold Voltage 0.95V
Minimum Gate Threshold Voltage 0.4V
Maximum Gate Source Voltage -8 V, +8 V
Package Type Micro
Mounting Type Surface Mount
Pin Count 3
Transistor Configuration Single
Channel Mode Enhancement
Maximum Power Dissipation 1.3 W
Width 1.4mm
Number of Elements per Chip 1
Height 1.02mm
Series HEXFET
Maximum Operating Temperature +150 °C
Transistor Material Si
Length 3.04mm
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 10 nC @ 5 V
261000 In stock for delivery within 3 working days
Price Each (On a Reel of 3000)
SGD 0.142
(exc. GST)
SGD 0.152
(inc. GST)
units
Per unit
Per Reel*
3000 - 3000
SGD0.142
SGD426.00
6000 - 9000
SGD0.138
SGD414.00
12000 - 27000
SGD0.128
SGD384.00
30000 +
SGD0.121
SGD363.00
*price indicative
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