STMicroelectronics STripFET Type P-Channel MOSFET, 10 A, 60 V Enhancement, 3-Pin TO-252 STD10P6F6
- RS Stock No.:
- 917-2747
- Mfr. Part No.:
- STD10P6F6
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
SGD22.94
(exc. GST)
SGD25.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 820 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 40 | SGD1.147 | SGD22.94 |
| 60 - 80 | SGD1.104 | SGD22.08 |
| 100 + | SGD1.035 | SGD20.70 |
*price indicative
- RS Stock No.:
- 917-2747
- Mfr. Part No.:
- STD10P6F6
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | STripFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 30W | |
| Typical Gate Charge Qg @ Vgs | 6.4nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.1V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.6mm | |
| Width | 7.45 mm | |
| Height | 2.38mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series STripFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 30W | ||
Typical Gate Charge Qg @ Vgs 6.4nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.1V | ||
Maximum Operating Temperature 175°C | ||
Length 6.6mm | ||
Width 7.45 mm | ||
Height 2.38mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics STripFET Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- STMicroelectronics STripFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-252
- STMicroelectronics STripFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-252 STD26P3LLH6
- STMicroelectronics STripFET Type P-Channel MOSFET 40 V Enhancement, 8-Pin SOIC
- STMicroelectronics STripFET F6 Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 STD35P6LLF6
- STMicroelectronics STripFET Type P-Channel MOSFET 40 V Enhancement, 8-Pin SOIC STS10P4LLF6
- STMicroelectronics STripFET Type P-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223
- STMicroelectronics STripFET Type P-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223 STN3P6F6