SiC N-Channel MOSFET, 23 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0120090D
- RS Stock No.:
- 915-8849P
- Mfr. Part No.:
- C3M0120090D
- Manufacturer:
- Wolfspeed
57 In stock for delivery within 4 working days
Price Each (Supplied in a Tube)
SGD15.89
(exc. GST)
SGD17.32
(inc. GST)
Units | Per unit |
---|---|
5 - 9 | SGD15.89 |
10 - 29 | SGD15.57 |
30 - 89 | SGD15.24 |
90 + | SGD14.94 |
- RS Stock No.:
- 915-8849P
- Mfr. Part No.:
- C3M0120090D
- Manufacturer:
- Wolfspeed
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
Enhancement-mode N-channel SiC technology
High Drain-Source breakdown voltages - up to 1200V
Multiple devices are easy to parallel and simple to drive
High speed switching with low on-resistance
Latch-up resistant operation
High Drain-Source breakdown voltages - up to 1200V
Multiple devices are easy to parallel and simple to drive
High speed switching with low on-resistance
Latch-up resistant operation
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Wolfspeed
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 23 A |
Maximum Drain Source Voltage | 900 V |
Package Type | TO-247 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 155 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.5V |
Minimum Gate Threshold Voltage | 1.8V |
Maximum Power Dissipation | 97 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -8 V, +18 V |
Length | 16.13mm |
Width | 21.1mm |
Transistor Material | SiC |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Typical Gate Charge @ Vgs | 17.3 nC @ 15 V |
Minimum Operating Temperature | -55 °C |
Height | 5.21mm |
Forward Diode Voltage | 4.8V |